Description
Written by and for electrical engineers, this volume focuses on two of the most promising applications of SiC technology: gas and chemical sensing, and electric vehicle motor drive and control. The contributors also address in some detail the underlying device and processing issues that enable these applications areas to be served by this technology. After reviewing the status of the technology as of 2003, they take the two application areas in turn. Then they step back and explore SiC implantation technology, which they identify as key because the properties of the SiC lattice precludes using thermal diffusion to achieve planar selective doping over the surface of single-crystal wafers. Annotation ©2004 Book News, Inc., Portland, OR (booknews.com)
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Advances In Silicon Carbide Processing and Applications provides detailed coverage of the latest advances in SiC (silicon carbide) technology from the leading experts in the field. The book serves as the professional's single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices.Key issues in selective doping of SiC via ion implantation are covered with a special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an assessment of today's SiC technology and explains how SiC can be adopted in developing tomorrow's applications.
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